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AMMC GHz 1W Power Amplifier |

Combinations of supply voltage, drain current, input power, and output power shall not exceed PD. Typical ESD diode current versus diode voltage for connected diodes in series Figure Frequency range 6 to 18 GHz? Electro Discharge Damage and Control.

The drain bias voltage range is 3 to 5V. The drift error will be less than 0. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.

There are three methods to calculate Vofs: Junction operating temperature will directly affect the device MTTF. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies 9.

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Observe Precautions for handling electrostatic sensitive devices. Small signal Gain of 18dB? This method gives an error due to temperature drift of less than 0. No ground wires are needed since ground connections are made with plated through-holes to the backside of the device. A single DC gate supply connected to Vg will bias all gain stages. Data subject to change.

Broadband Wireless Access including Operation in excess of any one of these conditions may result in permanent damage to this device. Typical ESD diode current versus diode voltage for connected diodes in series is shown in Figure This data represents package part performances, and does not contain test fixture losses.

Negative wmmc is used for the DC gate amnc. Typical IM3 level and Ids vs. Muting can be accomplished by setting Vgg to the pinch-off voltage Vp.

AMMC-6408 6-18 GHz 1W Power Amplifier

Vofs can be measured at a single reference temperature. Typical S11 over temperature Figure Typical IM3 level vs. In a finalized package form, Vd1 and Vd2 terminals are 6048 connected to the Vdd terminal.

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Integrated RF power detector? Typical S22 over temperature Figure Wide Frequency Range GHz? This method gives an error close to the method 1.

Typical Gain and Reverse Isolation Figure 2. An optional output power detector network is also provided. Vofs can either be characterized over temperature and stored in a lookup table, or it can be measured at two temperatures and a linear fit used to calculate Vofs at any temperature. Minor improvements in performance are possible depending on the application.

Vofs can be measured before each detector measurement by removing or switching off the power source and measuring Vref – Vdet. Input port partially matched For narrowband applications, customer may obtain optimum matching and gain with an additional matching circuit?

These ratings apply to each individual FET 5. A typical measured detector voltage ammv output power at 18GHz is shown Figure The bonding diagram for the recommended zmmc is shown in Figure

Last modified: October 16, 2020